vishay siliconix SI4621DY document number: 73855 s11-1648-rev. d, 15-aug-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 20-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 definition ? little foot ? plus schottky ? compliant to rohs directive 2002/95/ec applications ? portable devices - ideal for boost circuits - ideal for buck circuits product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) - 20 0.054 at v gs = - 10 v 6.2 4.5 nc 0.094 at v gs = - 4.5 v 4.7 schottky product summary v ka (v) v f (v) diode forward voltage i f (a) a 20 0.45 at 1 a 2 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage (mosfet) v ds - 20 v reverse voltage (schottky) v ka 20 gate-source voltage (mosfet) v gs 20 continuous drain current (t j = 150 c) (mosfet) t c = 25 c i d - 6.2 a t c = 70 c - 5 a t a = 25 c - 5 b, c t a = 70 c - 4 b, c pulsed drain current (mosfet) i dm - 25 continuous source-drain diode current (mosfet diode conduction) t c = 25 c i s - 2.6 t a = 25 c 1.7 b, c average forward current (schottky) i f 2 b pulsed forward current (schottky) i fm 5 maximum power dissipation (mosfet) t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a = 70 c 1.3 b, c maximum power dissi pation (schottky) t c = 25 c 2.7 t c = 70 c 1.7 t a = 25 c 1.6 b, c t a = 70 c 1 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c ak a k sd g d so-8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4621DY-t1-e3 (lead (p b )-free) SI4621DY-t1-ge3 (lead (p b )-free and halogen-free) k a s g d p-channel mosfet
www.vishay.com 2 document number: 73855 s11-1648-rev. d, 15-aug-11 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. f. maximum under steady stat e conditions is 110 c/w. g. maximum under steady stat e conditions is 115 c/w. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) b, f r thja 55 62.5 c/w maximum junction-to-foot (drain) (mosfet) r thjf 33 40 maximum junction-to-ambient (schottky) b, g r thja 63 78 maximum junction-to-foot (drain) (schottky) r thjf 39 47 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 16 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 3.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ? 5 v, v gs = - 10 v - 25 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 5 a 0.042 0.054 ? v gs = - 4.5 v, i d = - 1.1 a 0.073 0.094 forward transconductance a g fs v ds = - 10 v, i d = - 5 a 10 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 450 pf output capacitance c oss 160 reverse transfer capacitance c rss 105 total gate charge q g v ds = - 10 v, v gs = - 10 v, i d = - 6.2 a 8.7 13 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 6.2 a 4.5 6.8 gate-source charge q gs 1.7 gate-drain charge q gd 1.8 gate resistance r g f = 1 mhz 9 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.5 ? i d ? - 4 a, v gen = - 4.5 v, r g = 1 ? 15 25 ns rise time t r 60 90 turn-off delaytime t d(off) 22 35 fall time t f 15 25 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.5 ? i d ? - 4 a, v gen = - 10 v, r g = 1 ? 510 rise time t r 60 90 turn-off delaytime t d(off) 20 30 fall time t f 715
document number: 73855 s11-1648-rev. d, 15-aug-11 www.vishay.com 3 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 6.2 a pulse diode forward current i sm - 25 body diode voltage v sd i s = - 1.7 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 1.7 a, di/dt = 100 a/s, t j = 25 c 21 40 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 7 ns reverse recovery rise time t b 16 schottky specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 1 a 0.41 0.45 v i f = 1 a, t j = 125 c 0.36 0.41 maximum reverse leakage current i rm v r = 20 v 0.02 0.20 ma v r = 20 v, t j = 85 c 0.7 7 v r = 20 v, t j = 125 c 550 junction capacitance c t v r = 10 v 60 pf
www.vishay.com 4 document number: 73855 s11-1648-rev. d, 15-aug-11 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mosfet typical characteristics (t a = 25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 00.511.522.53 v gs = 10 v thr u 6 v v ds - drain-to-so u rce v oltage ( v ) i d - drain c u rrent (a) v gs = 5 v v gs = 4 v v gs = 3 v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 v gs = 4.5 v v gs = 10 v r ds(on) - on-resistance ( ) i d - drain c u rrent (a) 0 2 4 6 8 10 0246 8 10 i d = 6.2 a v ds = 10 v v ds = 16 v v gs - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 01234 v gs - gate-to-so u rce v oltage ( v ) i d - drain c u rrent (a) t j = 125 c t j = 25 c t j = - 55 c 0 100 200 300 400 500 600 700 8 00 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 04 8 12 16 20 2 6 10 14 1 8 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance ( n ormalized) t j - j u nction temperat u re (c) v gs = 10 v , 5 a i d = 5 a
document number: 73855 s11-1648-rev. d, 15-aug-11 www.vishay.com 5 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mosfet typical characteristics (t a = 25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 1 10 100 0 0.2 0.4 0.6 0. 8 1 1.2 1.4 30 v sd - so u rce-to-drain v oltage ( v ) i s - so u rce c u rrent (a) 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 i d = 250 a t j - j u nction temperat u re (c) v gs(th) ( v ) - 50 0 50 100 150 - 25 25 75 125 on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.05 0.10 0.15 0.20 0.25 0 . 30 0246 8 10 i d = 5 a v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( w e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) t a = 25 c t a = 125 c 0 50 10 20 30 40 po w er ( w ) time (s) 10 -2 10 -1 1 10 100 600 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 s 0.1 10 s dc 10 ms 100 ms 1 ms b v dss limited 100 s limited b y r ds(on) * t a = 25 c single p u lse v ds - drain-to-so u rce v oltage ( v ) * v ds > minim u m v gs at w hich r ds(on) is specified i d - drain c u rrent (a)
www.vishay.com 6 document number: 73855 s11-1648-rev. d, 15-aug-11 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mosfet typical characteristics (t a = 25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 1 2 3 4 25 50 75 100 125 150 po w er dissipation ( w ) t c - case temperat u re (c)
vishay siliconix SI4621DY document number: 73855 s11-1648-rev. d, 15-aug-11 www.vishay.com 7 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mosfet typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit base = r thja = 90 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 10 -4 10 -3 10 -2 10 -1 600 100 10 1 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance normalized thermal transient impedance, junction-to-foot 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 1 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5
www.vishay.com 8 document number: 73855 s11-1648-rev. d, 15-aug-11 vishay siliconix SI4621DY this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky typical characteristics (t a = 25 c, unless otherwise noted) reverse current vs. junction temperature 0.00001 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 150 125 100 75 100 10 20 v 10 v i f - re v erse c u rrent (ma) t j - j u nction temperat u re (c) forward voltage drop 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 t j = 150 c t j = 25 c v f - for w ard v oltage drop ( v ) i f - for w ard c u rrent (a) capacitance 0 60 120 1 8 0 240 300 04 8 12 16 20 v rs - re v erse v oltage ( v ) c t - j u nction capacitance (pf)
vishay siliconix SI4621DY document number: 73855 s11-1648-rev. d, 15-aug-11 www.vishay.com 9 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky typical characteristics (t a = 25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73855 . normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1000 100 10 1 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 92 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-foot 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 100 10 1 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 0.05 0.05 0.02 single p u lse d u ty cycle = 0.5 0.1
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